inchange semiconductor isc product specification isc website www.iscsemi.cn isc n-channel mosfet transistor 9N60 features drain current C i d = 8.5a@ t c =25 drain source voltage- : v dss = 600v(min) static drain-source on-resistance : r ds(on) = 1.0 (max) avalanche energy specified fast switching simple drive requirements descrition designed for high efficiency switch mode power supply. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 600 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 8.5 a i dm drain current-single plused 34 a p d total dissipation @t c =25 125 w t j max. operating junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.0 /w r th j-a thermal resistance, junction to ambient 62.5 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn isc n-channel mosfet transistor 9N60 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 600 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 5a 1.0 i gss gate-body leakage current v gs = 20v; v ds = 0 100 na i dss zero gate voltage drain current v ds = 600v; v gs = 0 1 a v sd forward on-voltage i s = 8.5a; v gs = 0 1.7 v
|
